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TPCF8301 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TPCF8301
功能描述  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
PDF  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPCF8301 数据表(HTML) 3 Page - Toshiba Semiconductor

  TPCF8301 Datasheet HTML 1Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 2Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 3Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 4Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 5Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 6Page - Toshiba Semiconductor TPCF8301 Datasheet HTML 7Page - Toshiba Semiconductor  
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TPCF8301
2006-11-16
3
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35 A
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature.
Note 6:
A dot on the lower left of the marking indicates Pin 1
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
(a)
25.4
Part No.
(or abbreviation code)
F3C
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code



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