| 数据搜索系统,热门电子元器件搜索 |
|
STN2NF10 数据表(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STN2NF10 数据表(HTML) 3 Page - STMicroelectronics |
|
3 / 13 page ![]() STN2NF10 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 2.4 A ID Drain current (continuous) at TC = 100°C 1.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 17 A Derating factor 0.026 W/°C PTOT (2) 2. This value is rated according to Rthj-amb, t < 10sec Total dissipation at TC = 25°C 3.3 W EAS (3) 3. IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C Single pulse avalanche energy 200 mJ dv/dt (4) 4. ISD < 6A, di/dt < 500A/µs, VDD= 80% V(BR)DSS Peak diode recovery voltage slope 30 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec) Thermal resistance junction-amb 38 °C/W Rthj-amb (2) 2. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec) Thermal resistance junction-amb 62.5 °C/W |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |