STN2NF10_07 datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STN2NF10

功能描述	N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STN2NF10

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

VDS = 30V, Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 1.2A

0.23

0.26

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward transconductance

VDS =15V, ID=1.2A

2.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz, VGS=0

280

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=80V, ID = 6A

VGS =10V

(see Figure 15)

2.5

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