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ADL8113ACCZ-R7 数据表(PDF) 34 Page - Analog Devices |
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ADL8113ACCZ-R7 数据表(HTML) 34 Page - Analog Devices |
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34 / 37 page ![]() Data Sheet ADL8113 THEORY OF OPERATION analog.com Rev. 0 | 34 of 37 The ADL8113 integrates an amplifier with two switching networks located at the RF input and output. The amplifier, which is internally AC-coupled on its input and output, uses a gallium arsenide (GaAs) LNA die. The switching network employs robust silicon-on-insulator (SOI) technology for fast switching and a short settling time. This integrated solution has four different signal path modes available: internal amplifier, internal bypass, External Bypass A, and External Bypass B. Signal path modes are controlled through the VA and VB digital pins. The internal amplifier is biased up by applying 5V to VDD1 and by connecting a bias resistor between VDD1 and RBIAS. The reflective switch network is powered by applying +3.3V and −3.3V to VDD2 and VSS2, respectively. DC bias to the switches is independent of the LNA. Turning off the bias to VDD1 that controls the LNA provides better isolation between RF ports. SIGNAL PATH MODES FOR DIGITAL CONTROL INPUTS Figure 116 through Figure 119 show the signal path modes for the digital control inputs, while Table 12 details these modes for the digital control inputs. Figure 116. Internal Amplifier Mode, VA = 0V and VB = 0V Figure 117. Internal Bypass Mode, VA = 3.3V and VB = 3.3V Figure 118. External Bypass A Mode, VA = 0V and VB = 3.3V Figure 119. External Bypass B Mode, VA = 3.3V and VB = 0V Table 12. Truth Table for the Signal Path Modes for the Digital Control Inputs Mode Name Digital Control Signal Path Mode VA VB Internal Amplifier Low Low RFIN to RFOUT through the amplifier path Internal Bypass High High RFIN to RFOUT through the bypass path External Bypass A Low High RFIN to OUT_A and IN_A to RFOUT External Bypass B High Low RFIN to OUT_B and IN_B to RFOUT |
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