MP6404 datasheet(1/11 Pages) TOSHIBA

部件名	MP6404

功能描述	High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications

PDF	11 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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MP6404

2006-10-27

1

TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L2-π-MOSV inOne)

MP6404

High Power High Speed Switching Applications

3-Phase Motor Drive and Stepping Motor Drive

Applications

• 4-V gate drivability

• Small package by full molding (SIP 12 pins)

• High drain power dissipation (6-device operation)

: PT = 36 W (Tc = 25°C)

• Low drain-source ON resistance: RDS (ON) =120 mΩ (typ.) (Nch)

160 mΩ (typ.) (Pch)

• High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch)

4.0 S (typ.) (Pch)

• Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)

IDSS = 100 μA (max) (VDS = 60 V)

• Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Rating

Characteristics

Symbol

Nch

Pch

Unit

Drain-source voltage

VDSS

60

−60

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

60

−60

V

Gate-source voltage

VGSS

±20

V

DC

ID

5

−5

Drain current

Pulse

IDP

20

−20

A

Drain power dissipation

(1-device operation, Ta = 25°C)

PD

2.2

W

Ta = 25°C

4.4

Drain power dissipation

(6-device operation)

Tc = 25°C

PDT

36

W

Single pulse avalanche energy

(Note 1)

EAS

129

273

mJ

Avalanche current

IAR

5

−5

A

1 device

operation

EAR

0.22

Repetitive avalanche

energy

(Note 2) 6 device

operation

EART

0.44

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Condition for avalanche energy (single pulse)

Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A

Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A

Note 2: Repetitive rating; pulse width limited by maximum channel temperature

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32C1K

Weight: 3.9 g (typ.)

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