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MP6404 数据表(PDF) 10 Page - Toshiba Semiconductor |
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MP6404 数据表(HTML) 10 Page - Toshiba Semiconductor |
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10 / 11 page ![]() MP6404 2006-10-27 10 Drain-source voltage VDS (V) Safe Operating Area (Applicable to Nch MOS FET) Drain-source voltage VDS (V) Safe Operating Area (Applicable to Pch MOS FET) Channel temperature Tch (°C) EAS – Tch (Applicable to Nch MOS FET) Channel temperature Tch (°C) EAS – Tch (Applicable to Pch MOS FET) 0 25 100 200 300 400 500 50 75 100 125 150 0 25 40 80 120 160 200 50 75 100 125 150 −0.1 −1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.3 −1 −3 −10 −30 −3 −10 −30 −100 ID max 1 ms* 100 μs* 10 ms* 10 μs* 100 ms* 0.1 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 3 10 30 100 ID max 1 ms* 100 μs* 10 ms* 10 μs* 100 ms* Test Cirdcuit Test Waveform IAR BVDSS VDD VDS Peak IAR = 5 A, RG = 25 Ω VDD = 25 V, L = 7 mH −15 V 15 V ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = DD VDSS VDSS 2 AS V B B · ·L·I 2 1 Ε Test Circuit Test Waveform IAR BVDSS VDD VDS Peak IAR = −5 A, RG = 25 Ω VDD = −25 V, L = 14.84 mH −15 V 15 V ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = DD VDSS VDSS 2 AS V B B · ·L·I 2 1 Ε |
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