TLP705

2007-10-01

1

Unit in mm

Weight:0.26 g (t yp.)

4.58±0.25

9.7±0.3

0.4±0.1

1.27±0.2

1.25±0.25

7.62±0.25

1 2 3

6 5 4

11-5J1

TOSHIBA

11-5J1

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC

TLP705

Plasma Display Panel.

Industrial Inverter

IGBT/Power MOS FET Gate Drive

TLP705 consists of a GaAℓAs light emitting diode and a integrated

photodetector.

This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP

and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced.

TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs.

• Peak output current

: ±0.45 A (max)

• Operating frequency

: 250kHz (max)

• Guaranteed performance over temperature : −40 to 100°C

• Supply current

: 3mA (max)

• Power supply voltage

: 10 to 20 V

• Threshold input current

: 200 ns (max)

• Common mode transient immunity

:±10 kV/μs(min)

• Isolation voltage

: 5000 Vrms(min)

• UL Recognized

:UL1577, File No.E67349

• Construction Mechanical Rating

7.62-mm pitch

standard type

10.16-mm pitch

TLPXXXF type

Creepage Distance

Clearance

Insulation Thickness

7.0 mm (min)

7.0 mm (min)

0.4 mm (min)

8.0 mm (min)

8.0 mm (min)

0.4 mm (min)

• Option (D4)

TÜV approved

: EN60747-5-2

Certificate No. R50033433

Maximum operating insulation voltage

Highest permissible over voltage

( Note ) When a EN60747-5-2 approved type is needed,

please designate the “Option(D4)”

Truth Table

Input

LED

Tr1

Tr2

Output

H

ON

ON

OFF

H

L

OFF

OFF

ON

L

A 0.1

μF bypass capacitor must be connected

between pins 6 and 4. (See Note 6.)

1

+

3

−

GND

(Tr1)

(Tr2)

6

5

4

SHIELD

Schematic

1: ANODE

2: NC

3: CATHODE

4: GND

1

3

5

6

2

SHIELD