MMA047CP4

Electrical Specifications

 Data Sheet

© 2024 Microchip Technology Inc. and its subsidiaries

DS00005609A - 3

1.

Electrical Specifications

1.1

Typical Electrical Performance

Table 1-1. Typical Electrical Specifications at 25 °C, VDD = 7V, IDD = 180 mA (Unless otherwise mentioned)

Parameter

Frequency Range

Min

Typ.

Max

Units

Frequency Range

4

14

GHz

Gain

4 – 14 GHz

19

21

dB

Gain flatness

4 – 14 GHz

±0.5

dB

Noise Figure

6 – 12 GHz

1.5

2.5

dB

Input Return Loss

4 – 14 GHz

12

dB

Output Return Loss 4 – 14 GHz

15

dB

P1dB

4 – 14 GHz

16

20

dBm

Psat

4 – 14 GHz

18

22

dBm

OIP3

4 – 14 GHz

27

32

dBm

Hot Switching (ON/

OFF)

4 – 14 GHz

50

ns

Phase Noise

1 kHz Offset

–135

dBc/Hz

10 kHz Offset

–150

Stability k–factor

4 – 14 GHz

1.5

Input Power

Survivability (CW)

4 – 14 GHz

32

dBm

VDD (Drain Voltage

Supply)

7

V

IDD (Drain Current)

180

mA

1.2

Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the MMA047CP4 device at 25 °C, unless

otherwise specified. Exceeding any of the maximum ratings could cause damage and/or latent

defects to the device.

Table 1-2. Absolute Maximum Ratings

Parameters

Conditions

Drain bias voltage (VDD)

8V

Drain bias current (VDD)

200 mA

Gate bias voltage (VG)

–2V to 0.5V

RF input power (Pin)

+32 dBm (CW)

Channel temperature

175 °C

Thermal resistance

12 °C/W

Storage temperature

–65 °C to + 150 °C

Operating temperature

–55 °C to + 85 °C

ESD

Class 1B (500V HBM)

ESD Sensitive Device