Data Sheet

© 2024 Microchip Technology Inc. and its subsidiaries

DS00005609A - 1

Product Overview

The MMA047CP4 is a Gallium Arsenide (GaAs), Monolithic Microwave Integrated Circuit (MMIC), Pseudomorphic

High-Electron-Mobility Transistor (pHEMT), distributed amplifier operating from 4 GHz to 14 GHz. Packaged in

a hermetically sealed, thermally enhanced ceramic hermetic QFN, the amplifier operates reliably with input

powers up to 32 dBm of CW RF power. The amplifier exhibits typical noise figure of 1.5 dB, 21 dB of gain, 32

dBm OIP3, and P1dB of 20 dBm operating off a single supply voltage. The MMA047CP4 amplifier includes an

on-chip bias choke and is internally matched to 50Ω for ease of application.

Key Features

•

Frequency range: 4 GHz to 14 GHz

•

Gain: 21 dB

•

OIP3: 32 dBm

•

Noise figure: 1.5 dB

•

CW input power rating: 32 dBm

•

On-chip bias choke

•

Supply: 7V at 180 mA; single supply with adjustable current

•

RF/DC ESD protection on chip

•

50Ω matched input/output

•

Package: 4 mm × 4 mm ceramic hermetic QFN

Applications

•

Test and measurement instrumentation

•

Electronic warfare (EW), electronic countermeasures (ECM), and

electronic counter-countermeasures (ECCM)

•

Military, A&D, space, SATCOM, C/X–Band

•

Telecom infrastructure

•

Wideband microwave radios and millimeter-wave

communications systems

Functional Block Diagram

Performance Overview

Parameter

Typ.

Units

Operational frequency range 4 – 14 GHz

Gain

21

dB

Noise figure

1.5

dB

P1dB

20

dBm

OIP3

32

dBm

Current at + 7V supply

180

mA

Export Classification: EAR–99

Performance Curves

0

5

10

15

20

25

0

5

10

15

20

25

30

35

4

6

8

10

12

14

16

Frequency (GHz)

S21, dB

P1dB, dBm

OIP3, dBm

NF, dB

4 GHz to 14 GHz GaAs MMIC LNA with High Input Power

Handling

MMA047CP4