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ADRF5030BCCZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADRF5030BCCZN-R7
功能描述  100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch
PDF  13 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5030BCCZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5030
100 MHz to 20 GHz, Non-Reflective, Silicon SPDT Switch
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Wideband frequency range, 100 MHz to 20 GHz
Non-reflective 50 Ω design
Low insertion loss
0.7 dB typical between 0.1 GHz to 6 GHz
0.9 dB typical between 6 GHz to 12 GHz
1.2 dB typical up to 20 GHz
High isolation
55 dB typical between 100 MHz to 6 GHz
50 dB typical between 6 GHz to 12 GHz
45 dB typical up to 20 GHz
High input linearity
P0.1dB: >36 dBm typical
IP3: >60 dBm typical
High RF power handling
Through path: 36 dBm peak/33 dBm average
Terminated path: 36 dBm peak/33 dBm average
Hot switching: 36 dBm peak/33 dBm average
CMOS/LVTTL compatible
No low-frequency spur; no negative voltage generator
RF switching time: 70 ns
RF settling time (0.1 dB): 95 ns
Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)
20-terminal, 3 mm × 3 mm, LGA package
Pin compatible with ADRF5022 and ADRF5026
APPLICATIONS
Test instrumentation
Military radios, radars, electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5030 is a non-reflective, single-pole double-throw
(SPDT) switch manufactured using the silicon on insulator (SOI)
process. The ADRF5030 operates from 100 MHz to 20 GHz with
insertion loss of lower than 1.2 dB and isolation of higher than
45 dB. The device has an RF input power handling capability of
33 dBm average/36 dBm peak for both RFC and RFx through
paths, termination paths, and hot switching for both RFC and
RFx ports. The ADRF5030 operates with dual-supply voltages
of ±3.3 V. The ADRF5030 employs complementary metal-oxide
semiconductor (CMOS) and low-voltage transistor to transistor logic
(LVTTL)-compatible control.
The ADRF5030 can also operate with a single positive supply volt-
age (VDD) applied while the negative supply voltage (VSS) is tied to
ground. In this operating condition, the small signal performance is
maintained while the switching characteristics, linearity, and power
handling performance are derated. See Table 2 for more details.
The ADRF5030 is pin compatible with the ADRF5022 and
ADRF5026, and also pin compatible with ADRF5031, a slow-
switching, low cut-off version, which operates between 9 kHz to
20 GHz.
The ADRF5030 is packaged in a 20-terminal, 3 mm × 3 mm,
RoHS-compliant, land grid array (LGA). The ADRF5030 operates
from −40°C to +105°C.


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