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数据搜索系统，热门电子元器件搜索 |
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IRLR024ZPBF 数据表(PDF) 2 Page - International Rectifier |
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IRLR024ZPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRLR/U024ZPbF 2 www.irf.com S D G S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C ––– 46 58 RDS(on) Static Drain-to-Source On-Resistance ––– ––– 80 m Ω ––– ––– 100 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 7.4 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 6.6 9.9 Qgs Gate-to-Source Charge ––– 1.6 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 3.9 ––– td(on) Turn-On Delay Time ––– 8.2 ––– tr Rise Time ––– 43 ––– td(off) Turn-Off Delay Time ––– 19 ––– ns tf Fall Time ––– 16 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 380 ––– Coss Output Capacitance ––– 62 ––– Crss Reverse Transfer Capacitance ––– 39 ––– pF Coss Output Capacitance ––– 180 ––– Coss Output Capacitance ––– 50 ––– Coss eff. Effective Output Capacitance ––– 81 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 16 (Body Diode) A ISM Pulsed Source Current ––– ––– 64 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 11 17 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 5.0V, ID = 5.0A e VGS = 4.5V, ID = 3.0A e VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VDS = 25V, ID = 9.6A ID = 5.0A VDS = 44V VGS = 16V VGS = -16V VGS = 5.0V e VDD = 28V ID = 5.0A RG = 28 Ω TJ = 25°C, IS = 9.6A, VGS = 0V e TJ = 25°C, IF = 9.6A, VDD = 28V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 9.6A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 5.0V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f |
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