IRLR024ZPBF datasheet(1/12 Pages) IRF

部件名	IRLR024ZPBF

功能描述	AUTOMOTIVE MOSFET

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRLR024ZPbF

IRLU024ZPbF

HEXFET® Power MOSFET

VDSS = 55V

RDS(on) = 58mΩ

ID = 16A

12/8/04

www.irf.com

1

AUTOMOTIVE MOSFET

PD - 95773A

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficient and reliable device for use in Automotive applications and

a wide variety of other applications.

S

D

G

Description

Features

n Logic Level

n Advanced Process Technology

n Ultra Low On-Resistance

n 175°C Operating Temperature

n Fast Switching

n Repetitive Avalanche Allowed up to Tjmax

n Lead-Free

D-Pak

IRLR024Z

I-Pak

IRLU024Z

HEXFET® is a registered trademark of International Rectifier.

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

PD @TC = 25°C Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS (Thermally limited) Single Pulse Avalanche Energy

d

mJ

EAS (Tested )

Single Pulse Avalanche Energy Tested Value

h

IAR

Avalanche Current

Ã

A

EAR

Repetitive Avalanche Energy

g

mJ

TJ

Operating Junction and

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

4.28

RθJA

Junction-to-Ambient (PCB mount)

i

–––

40

°C/W

RθJA

Junction-to-Ambient

–––

110

Max.

16

11

64

-55 to + 175

300 (1.6mm from case )

35

0.23

± 16

25

See Fig.12a, 12b, 15, 16

类似零件编号 - IRLR024ZPBF

制造商	部件名	数据表	功能描述
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