2N2369 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	2N2369

功能描述	HIGH-FREQUENCY SATURATED SWITCH

PDF	4 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2N2369

January 1989

HIGH-FREQUENCY SATURATED SWITCH

The 2N2369 is a silicon planar epitaxial NPN tran-

sistor in Jedec TO-18 metal case. It is designed spe-

cifically for high-speed saturated switching applica-

tions at current levels from 100

µA to 100 mA.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

VCBO

Collector-base Voltage (IE =0)

40

V

VCES

Collector-emitter Voltage (V BE =0)

40

V

VCEO

Collector-emitter Voltage (IB =0)

15

V

VEBO

Emitter-base Voltage (I C = 0)

4.5

V

I CM

Collector Peak Current (t = 10

µs)

0.5

A

Pto t

Total Power Dissipation at T amb ≤ 25 °C

at T cas e

≤ 25 °C

at T cas e ≤ 100 °C

0.36

1.2

0.68

W

T stg,Tj

Storage and Junction Temperature

– 65 to 200

°C

Products approved to CECC 50004-022/023 available on request.

DESCRIPTION

TO-18

INTERNAL SCHEMATIC DIAGRAM

1/4

类似零件编号 - 2N2369

制造商	部件名	数据表	功能描述
Motorola, Inc	2N2369	291Kb / 6P	Switching Transistors
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类似说明 - 2N2369

制造商	部件名	数据表	功能描述
STMicroelectronics	2N2369A	95Kb / 6P	HIGH-SPEED SATURATED SWITCH Nov-1988
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New Jersey Semi-Conduct...	2N5455	178Kb / 2P	PNP HIGH SPEED SATURATED LOGIC SWITCH
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