2N2369 datasheet(2/4 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff

Current (IE =0)

VCB =20 V

T amb =150

°C

0.4

µA

V(BR) CBO

Collector-base Breakdown

Voltage (IE =0)

I C =10 µA40

V(BR) CE S

Collector-emitter Breakdown

Voltage (VBE =0)

I C =10 µA40

V(BR) CEO *

Collector-emitter Breakdown

Voltage (IB =0)

I C =10 mA

V(BR) EBO

Emitter-base Breakdown

Voltage (IC =0)

I E =10

µA

4.5

VCE (sat )*

Collector-emitter Saturation

Voltage

I C =10 mA

I B = 1 mA

0.2

0.25

VBE (sat) *

Base-emitter Saturation

Voltage

I C =10 mA

I B = 1 mA

0.7

0.75

0.85

h FE*

DC Current Gain

I C =10 mA

I C =100 mA

I C =10 mA

T amb =– 55

°C

VCE =1 V

VCE =2 V

VCE =1 V

120

f T

Transition Frequency

I C =10 mA

f = 100 MHz

VCE = 10 V

500

650

MHz

C CBO

Collector-base Capacitance

I E =0

f = 1 MHz

VCB = 5 V

2.5

t s

Storage Time

I C =10 mA

I B1 =–

VCC =10 V

I B2 =10 mA

613

t on

Turn-on Time

I C =10 mA

I B1 =3 mA

VCC = 3 V

t off

Turn-off Time

I C =10 mA

I B1 =3 mA

VCC =3 V

I B2 = – 1.5 mA

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

146

486

°C/W

2N2369

2/4

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