STD12NF06 datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STD12NF06

功能描述	N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™II Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 14 page

STD12NF06 - STD12NF06-1

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20KΩ)60

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

8.5

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.2

W/°C

dv/dt (2)

ISD ≤12A, di/dt ≤200A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(3)

Starting TJ = 25

oC, I

D = 6A, VDD = 30V

Single pulse avalanche energy

140

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case Max

°C/W

RthJA

Thermal resistance junction-ambient Max

100

°C/W

Maximum lead temperature for soldering

purpose

275

°C

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