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STD12NF06 数据表(PDF) 4 Page - STMicroelectronics

部件名 STD12NF06
功能描述  N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™II Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD12NF06 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD12NF06 - STD12NF06-1
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA, VGS = 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 6A
0.08
0.1
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15V, ID = 6A
5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
315
70
30
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48V, ID = 12A
VGS = 10V
10
3.0
3.5
12
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 6A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
7
18
17
6
ns
ns
ns
ns



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