INA333-HT

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SBOS514C – MARCH 2010 – REVISED OCTOBER 2013

THERMAL CHARACTERISTICS FOR JD PACKAGE

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

High-K board(2), no airflow

64.9

θJA

Junction-to-ambient thermal resistance(1)

°C/W

No airflow

83.4

θJB

Junction-to-board thermal resistance

High-K board without underfill

27.9

°C/W

θJC

Junction-to-case thermal resistance

6.49

°C/W

(1)

The intent of

θJA specification is solely for a thermal performance comparison of one package to another in a standardized environment.

This methodolgy is not meant to and will not predict the performance of a package in an application-specific environment.

(2)

JED51-7, high effective thermal conductivity test board for leaded surface mount packages.

THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE

over operating free-air temperature range (unless otherwise noted)

PARAMETER

MIN

TYP

MAX

UNIT

to ceramic side of case

5.7

θJC

Junction-to-case thermal resistance

°C/W

to top of case lid (metal side of case)

13.7

ELECTRICAL CHARACTERISTICS: VS = +1.8 V to +5.5 V

At TA = +25°C, RL = 10kΩ, VREF = VS/2, and G = 1, unless otherwise noted.

TA = –55°C to +125°C

TA = +210°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

INPUT(1)

Offset voltage,

VOSI

±10 ±25/G

±25 ±75/G

±15

μV

RTI(2)

vs Temperature

±0.1 ±0.5/G(3)

0.2(4)(5)

μV/°C

vs Power supply

PSR

1.8 V

≤ VS ≤ 5.5 V

±1 ±5/G

±5 ±15/G

2.5(4)

μV/V

Long-term stability

See note (6)

Turn-on time to specified

See Typical characteristics

See Typical characteristics

VOSI

Impedance

Differential

ZIN

100 || 3

100 || 3

G

Ω || pF

Common-mode

ZIN

100 || 3

100 || 3

G

Ω || pF

Common-mode

VCM

VO = 0 V

(V–) + 0.1

(V+) – 0.1

(V–) + 0.1

(V+) – 0.1 V

V

voltage range

Common-mode

CMR

DC to 60 Hz

rejection

VCM = (V–) + 0.1 V to

G = 1

80

90

dB

(V+) – 0.1 V

VCM = (V–) + 0.1 V to

G = 10

100

110

dB

(V+) – 0.1 V

VCM = (V–) + 0.1 V to

G = 100

100

115

110

dB

(V+) – 0.1 V

VCM = (V–) + 0.1 V to

G = 1000

100

115

113

dB

(V+) – 0.1 V

INPUT BIAS CURRENT

Input bias current

IB

±70

±200

±1260

±2044

pA

vs Temperature

See Typical Characteristic curve

See Typical Characteristic curve

pA/°C

Input offset current

IOS

±50

±200

pA

vs Temperature

See Typical Characteristic curve

See Typical Characteristic curve

pA/°C

(1)

Total VOS, Referred-to-input = (VOSI) + (VOSO/G).

(2)

RTI = Referred-to-input.

(3)

Temperature drift is measured from –55°C to +125°C.

(4)

G = 1000

(5)

Temperature drift is measured from 125°C to +210°C.

(6)

300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1

μV.

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