1

10

100

1000

10000

100000

1000000

110

130

150

170

190

210

230

Continous TJ (°C)

Electromigration Fail Mode

Notes

1. See datasheet for absolute maximum and minimum recommended operating conditions.

2. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package

interconnect life).

INA333-HT

www.ti.com

SBOS514C – MARCH 2010 – REVISED OCTOBER 2013

ELECTRICAL CHARACTERISTICS: VS = +1.8 V to +5.5 V (continued)

At TA = +25°C, RL = 10kΩ, VREF = VS/2, and G = 1, unless otherwise noted.

TA = –55°C to +125°C

TA = +210°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

G = 1

VSTEP = 4 V

60

55

μs

G = 100

VSTEP = 4 V

500

530

μs

Overload recovery

50% overdrive

52

28

μs

REFERENCE INPUT

RIN

300

300

k

Ω

Voltage range

V–

V+

V–

V+

V

POWER SUPPLY

Voltage range

Single

+1.8

+5.5

+1.8

+5.5

V

Dual

±0.9

±2.75

±0.9

±2.75

V

Quiescent current

IQ

VIN = VS/2

50

75

μA

vs Temperature

80

198

345

μA

TEMPERATURE RANGE

Specified temperature

–55

+125

–55

+210

°C

range

Operating temperature

–55

+125

–55

+210

°C

range

Figure 1. INA333SKGD1 Operating Life Derating Chart

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