© 1997 Fairchild Semiconductor Corporation

www.fairchildsemi.com

PN2907 / MMBT2907 Rev. 1.1.0

3

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width ≤ 300

μs, duty cycle ≤ 2.0%.

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0

-40

V

V(BR)CBO Collector-Base Breakdown Voltage

IC = -10 μA, IE = 0

-60

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE = -10 μA, IC = 0

-5.0

V

ICEX

Collector Cut-Off Current

VCE = -30 V, VEB = -0.5 V

-50

nA

IBL

Base Cut-Off Current

VCE = -30 V, VEB = -0.5 V

-50

nA

ICBO

Collector Cut-Off Current

VCB = -50 V, IE = 0

-20

nA

VCB = -50 V, IE = 0, TA = 150°C

-20

μA

On Characteristics(5)

hFE

DC Current Gain

VCE = -10 V, IC = -0.1 mA

35

VCE = -10 V, IC = -1.0 mA

50

VCE = -10 V, IC = -10 mA

70

VCE = -10 V, IC = -150 mA

100

300

VCE = -10 V, IC = -500 mA

30

VCE(sat) Collector-Emitter Saturation Voltage

IC = -150 mA, IB = -15 mA

-0.4

V

IC = -500 mA, IB = -50 mA

-1.6

VBE(sat) Base-Emitter Saturation Voltage

IC = -150 mA, IB = -15 mA

-1.3

V

IC = -500 mA, IB = -50 mA

-2.6

Small Signal Characteristics

Cob

Output Capacitance

VCB = -10 V, f = 1.0 MHz

8

pF

Cib

Input Capacitance

VEB = -2.0 V, f = 1.0 MHz

30

pF

hfe

Small-Signal Current Gain

IC = -50 mA, VCE = -20 V,

f = 100 MHz

2

Switching Characteristics

ton

Turn-On Time

VCC = -30 V, IC = -150 mA,

IB1 = -15 mA

45

ns

td

Delay Time

10

ns

tr

Rise Time

40

ns

toff

Turn-Off Time

VCC = -6.0 V, IC = -150 mA,

IB1 = IB2 = -15mA

100

ns

ts

Storage Time

80

ns

tf

Fall Time

30

ns