© 1997 Fairchild Semiconductor Corporation

www.fairchildsemi.com

PN2907 / MMBT2907 Rev. 1.1.0

2

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter Voltage

-40

V

VCBO

Collector-Base Voltage

-60

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current - Continuous

-800

mA

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Parameter

Max.

Unit

PN2907(3)

MMBT2907(4)

PD

Total Device Dissipation

625

350

mW

Derate Above 25

°C5.0

2.8

mW/

°C

RθJC

Thermal Resistance, Junction to Case

83.3

°C/W

RθJA

Thermal Resistance, Junction to Ambient

200

357

°C/W