OUT A

V

+

1

10

IN A

-

OUT B

2

9

IN A

+

IN B

-

3

8

IN B

+

4

7

N/C

N/C

5

6

V

-

LMP2012QML

www.ti.com

SNOSAU5H – MARCH 2007 – REVISED APRIL 2013

LMP2012QML Dual High Precision, Rail-to-Rail Output Operational Amplifier

1

FEATURES

DESCRIPTION

The LMP2012 offers unprecedented accuracy and

2

•

Total Ionizing Dose 50 krad(Si)

stability. This device utilizes patented techniques to

•

ELDRS Free 50 krad(Si)

measure and continually correct the input offset error

•

TCVIO Temperature Sensitivity (Typical) 0.015

voltage. The result is an amplifier which is ultra stable

µV/°C

over time and temperature. It has excellent CMRR

and PSRR ratings, and does not exhibit the familiar

(For VS = 5V, Typical Unless Otherwise Noted)

1/f voltage and current noise increase that plagues

•

Low Ensured VIO over Temperature 60 µV

traditional

amplifiers.

The

combination

of

the

•

Low Noise with no 1/f 35nV/

√Hz

LMP2012 characteristics makes it a good choice for

transducer amplifiers, high gain configurations, ADC

•

High CMRR 90 dB

buffer amplifiers, DAC I-V conversion, and any other

•

High PSRR 90 dB

2.7V-5V application requiring precision and long term

•

High AVOL 85 dB

stability.

•

Wide Gain-Bandwidth Product 3MHz

Other useful benefits of the LMP2012 are rail-rail

•

High Slew Rate 4V/µs

output, low supply current of 930

μA, and wide gain-

bandwidth product of 3 MHz. These extremely

•

Rail-to-Rail Output 30mV

versatile features found in the LMP2012 provide high

•

No External Capacitors Required

performance and ease of use.

The QMLV version of the LMP2012 has been rated to

APPLICATIONS

tolerate a total dose level of 50krad/(Si) radiation by

•

Attitude and Orbital Controls

test method 1019 of MIL-STD-883.

•

Static Earth Sensing

•

Sun Sensors

•

Inertial Sensors

•

Pressure Sensors

•

Gyroscopes

•

Earth Observation Systems

Connection Diagram

Figure 1. 10-Lead CLGA (Top View)

See NAC Package

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2007–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.