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LP8900TLE-AAEB 数据表(PDF) 6 Page - Texas Instruments

部件名 LP8900TLE-AAEB
功能描述  LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits
PDF  23 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

LP8900TLE-AAEB 数据表(HTML) 6 Page - Texas Instruments

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6
LP8900
SNVS542E – MAY 2008 – REVISED JUNE 2016
www.ti.com
Product Folder Links: LP8900
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Electrical Characteristics (continued)
Unless otherwise noted, VEN = 1.2 V, VIN = VOUT + 0.5 V, or 1.8 V, whichever is higher (where VOUT is the higher of VOUT1 and
VOUT2), CIN = COUT = 1 µF, and IOUT = 1 mA. Typical values apply for TA = 25°C; minimum and maximum values apply over the
full junction temperature range for operation,
−40 to +125°C, unless otherwise specified.
(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRANSIENT CHARACTERISTICS
Line transient response
|
δVOUT|
Trise = Tfall = 30 µs
δVIN = 600 mV
1
mV
(pk - pk)
Transient
response
Load transient response
|
δVOUT|
Trise = Tfall = 1 µs
IOUT = 1 mA to 200 mA
80
mV
IOUT = 200 mA to 1 mA
70
Overshoot on start-up
0%
1%
7.6 Timing Requirements
Nominal values apply for TA = 25°C; minimim and maximum values apply over the full junction temperature range for
operation,
−40 to +125°C, unless otherwise specified.
MIN
NOM
MAX
UNIT
TON
Turnon time to 95% level, VOUT(NOM)
80
200
µs
TOFF
Turnoff Time, 5% of VOUT(NOM), IOUT = 0 mA
0.4
1
ms



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