D+

28

27

26

25

24

23

22

21

20

19

1

2

3

4

5

6

7

8

9

10

Device

D–

V

BUS

DGNDU

HID0

HID1

HID2

SEL0

SEL1

V

CCCI

SSPND

XTI

V

DDI

DGND

DOUT

DIN

XTO

V

CCP2I

AGNDX

V

CCXI

D+

D–

C

1

11

12

13

14

AGNDC

V L

IN

V R

IN

V

COM

18

17

16

15

V

CCP1I

V

L

OUT

V

R

OUT

AGNDP

22 W

22 W

1.5 k

3

W ´

1.5 kW

GND

V

BUS

C

2

C

9

C

10

1 MW

12 MHz

C

5

C

6

C

3

C

8

C

11

C

12

LPF,

Amp

LPF,

Amp

C

7

C

4

3.60 V–

3.85 V

13 kW

27 kW

IN

1

OUT

2

GND

3

ADJ

4

EN

5

IC1

MUTE/

Power

Down

+

+

C

13

+

+

+

+

D

1

2.2 W

1 F

m

S0264-02

PCM2906C

SBFS037

– NOVEMBER 2011

www.ti.com

APPLICATION INFORMATION

TYPICAL CIRCUIT CONNECTION 1

Figure 36 illustrates a typical circuit connection for a simple application. The circuit illustrated is for information

only. The entire board design should be considered to meet the USB specification as a USB-compliant product.

NOTE: C1, C2: 10 μF

C3, C4, C7, C8, C13: 1 μF (These capacitors must be less than 2 μF.)

C5, C6: 10 pF to 33 pF (depending on crystal resonator)

C9, C10, C11, C12: The capacitance may vary depending on design.

IC1: REG103xA-A (TI) or equivalent. Analog performance may vary depending on IC1.

D1: Schottky barrier diode (VF ≤ 350 mV at 10 mA, IR ≤ 2 μA at 4 V)

Figure 36. Bus-Powered Configuration for High-Performance Application

24

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© 2011, Texas Instruments Incorporated

Product Folder Link(s): PCM2906C