STSJ80N4LLF3 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STSJ80N4LLF3

功能描述	N-channel 40V - 0.0042Ω - 18A - PowerSO-8??STripFET™III Power MOSFET for DC-DC conversion

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STSJ80N4LLF3

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 40V, TC = 25°C

VDS = 40V, TC = 125°C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16V

±200

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 9A

VGS = 4.5V, ID = 9A

0.0042

0.005

0.007

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

2530

574

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20V, ID = 18A

VGS = 4.5V

(see Figure 13)

21.5

6.9

8.2

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20mV

open drain

Ω

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