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STSJ80N4LLF3 数据表(PDF) 5 Page - STMicroelectronics

部件名 STSJ80N4LLF3
功能描述  N-channel 40V - 0.0042Ω - 18A - PowerSO-8??STripFET™III Power MOSFET for DC-DC conversion
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STSJ80N4LLF3 数据表(HTML) 5 Page - STMicroelectronics

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STSJ80N4LLF3
Electrical characteristics
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Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 20V, ID = 9A
RG =4.7Ω , VGS = 10V
(see Figure 15)
17
25
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 20V, ID = 9A
RG =4.7Ω , VGS = 10V
(see Figure 15)
62
9
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
18
72
A
A
VSD
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 18A , VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see Figure 14)
43
64
3
ns
nC
A



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