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STM32F412RGT7PTR 数据表(PDF) 86 Page - STMicroelectronics |
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STM32F412RGT7PTR 数据表(HTML) 86 Page - STMicroelectronics |
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86 / 201 page ![]() Electrical characteristics STM32F412xE/G 86/201 DocID028087 Rev 7 6.3.4 Operating conditions at power-up / power-down (regulator OFF) Subject to general operating conditions for TA. Note: This feature is only available for UFBGA100 and UFBGA144 packages. 6.3.5 Embedded reset and power control block characteristics The parameters given in Table 21 are derived from tests performed under ambient temperature and VDD supply voltage @ 3.3V. Table 20. Operating conditions at power-up / power-down (regulator OFF)(1) 1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below 1.08 V. Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate Power-up 20 ∞ µs/V VDD fall time rate Power-down 20 ∞ tVCAP VCAP_1 and VCAP_2 rise time rate Power-up 20 ∞ VCAP_1 and VCAP_2 fall time rate Power-down 20 ∞ Table 21. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 PLS[2:0]=101 (falling edge) 2.65 2.84 3.02 PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 VPVDhyst(2) PVD hysteresis - - 100 - mV VPOR/PDR Power-on/power-down reset threshold Falling edge 1.60(1) 1.68 1.76 V Rising edge 1.64 1.72 1.80 |
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