 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
STM32F412RGT7PTR 数据表(PDF) 153 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F412RGT7PTR 数据表(HTML) 153 Page - STMicroelectronics |
|
|
153 / 201 page  DocID028087 Rev 7 153/201 STM32F412xE/G Electrical characteristics 166 Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms 1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used. Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 3 THCLK - 1 3 THCLK +0.5 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK + 0.5 THCLK + 0.5 tw(NWE) FSMC_NWE low time THCLK – 1.5 THCLK+ 1 th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 1 - tv(A_NE) FSMC_NEx low to FSMC_A valid - 0.5 th(A_NWE) Address hold time after FSMC_NWE high THCLK - 0.5 - tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1 th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK - 1 - tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK + 2 th(Data_NWE) Data hold time after FSMC_NWE high THCLK + 0.5 - tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 1 tw(NADV) FSMC_NADV low time - THCLK+ 0.5 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
