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SN74HCS21-Q1

SCLS761 – FEBRUARY 2020

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(1)

AEC Q100-002 indicate that HBM stressing shall be in accordrance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002(1)

HBM ESD Classification Level 2

±4000

V

Charged device model (CDM), per AEC Q100-011

CDM ESD Classification Level C6

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

6

V

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

Δt/Δv

Input transition rise and fall rate

Unlimited

ns/V

TA

Ambient temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC

SN74HCS21-Q1

UNIT

PW (TSSOP)

D (SOIC)

14 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

151.7

133.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

79.4

89.0

°C/W

RθJB

Junction-to-board thermal resistance

94.7

89.5

°C/W

ΨJT

Junction-to-top characterization parameter

25.2

45.5

°C/W

ΨJB

Junction-to-board characterization parameter

94.1

89.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

6.5 Electrical Characteristics

over operating free-air temperature range; typical ratings measured at TA = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

VCC

MIN

TYP

MAX UNIT

VT+

Positive switching threshold

2 V

0.7

1.5

V

4.5 V

1.7

3.15

6 V

2.1

4.2

VT-

Negative switching threshold

2 V

0.3

1.0

V

4.5 V

0.9

2.2

6 V

1.2

3.0

ΔVT

Hysteresis (VT+ - VT-)

2 V

0.2

1.0

V

4.5 V

0.4

1.4

6 V

0.6

1.6

VOH

High-level output voltage

VI = VIH or VIL

IOH = -20 µA

2 V to 6 V

VCC – 0.1

VCC – 0.002

V

IOH = -6 mA

4.5 V

4

4.3

IOH = -7.8 mA

6 V

5.4

5.75

VOL

Low-level output voltage

VI = VIH or VIL

IOL = 20 µA

2 V to 6 V

0.002

0.1

V

IOL = 6 mA

4.5 V

0.18

0.30

IOL = 7.8 mA

6 V

0.22

0.33

II

Input leakage current

VI = VCC or 0

6 V

±100

±1000

nA

ICC

Supply current

VI = VCC or 0, IO = 0

6 V

0.1

2

µA

Ci

Input capacitance

2 V to 6 V

5

pF