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STM32F429NET6TR 数据表(PDF) 120 Page - STMicroelectronics |
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STM32F429NET6TR 数据表(HTML) 120 Page - STMicroelectronics |
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120 / 231 page  Electrical characteristics STM32F427xx STM32F429xx 120/231 DocID024030 Rev 6 Figure 30. Typical application with a 32.768 kHz crystal 6.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user-trimming step (2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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