| 数据搜索系统,热门电子元器件搜索 |
|
STM32F427NET7 数据表(PDF) 227 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F427NET7 数据表(HTML) 227 Page - STMicroelectronics |
|
227 / 231 page ![]() DocID024030 Rev 6 227/231 STM32F427xx STM32F429xx Revision history 230 24-Jan-2014 3 Added STM32F429xE part numbers featuring 512 Mbytes of Flash memory and UFBGA169 package. Added LPSDR SDRAM. Changed INTN into INTR in Figure 4: STM32F427xx and STM32F429xx block diagram. Added note 4 in Table 2: STM32F427xx and STM32F429xx features and peripheral counts. Updated Section 3.15: Boot modes. Updated for PA4 and PA5 in Table 10: STM32F427xx and STM32F429xx pin and ball definitions. Added VIN for BOOT0 pins in Table 14: Voltage characteristics. Updated Note 6., added Note 1.,and updated maximum VIN for B pins in Table 17: General operating conditions. Updated maximum Flash memory access frequency with wait states for VDD =1.8 to 2.1 V in Table 18: Limitations depending on the operating power supply range. Updated Table 24: Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled except prefetch) or RAM and Table 25: Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator disabled). Updated Table 30: Typical current consumption in Run mode, code with data processing running from Flash memory or RAM, regulator ON (ART accelerator enabled except prefetch), VDD=1.7 V, Table 31: Typical current consumption in Run mode, code with data processing running from Flash memory, regulator OFF (ART accelerator enabled except prefetch), and Table 32: Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V. Updated Table 57: Output voltage characteristics. Updated Table 58: I/O AC characteristics. Added Figure 35. Updated th(SDA), tr(SDA) and tr(SCL) and added tSP in Table 61: I2C characteristics. Updated fSCK in Table 62: SPI dynamic characteristics. Updated Table 70: Dynamic characteristics: USB ULPI. Updated Section 6.3.26: FMC characteristics conditions. Updated Figure 73: SDRAM read access waveforms (CL = 1) and Figure 74: SDRAM write access waveforms. Added Table 103: LPSDR SDRAM read timings and Table 105: LPSDR SDRAM write timings. Updated Table 102: SDRAM read timings and Table 104: SDRAM write timings and added note 2.Table 108: Dynamic characteristics: SD / MMC characteristics. Table 124. Document revision history Date Revision Changes |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |