December 2007

Rev 1

1/8

8

STTH8S06

Turbo 2 ultrafast high voltage rectifier

Features

transistor

– Insulation voltage = 1500 V rms

– Package capacitance = 12 pF

Description

ST's STTH8S06 is a state of the art ultrafast

recovery diode. By the use of 600 V Pt doping

planar technology, this diode will out-perform the

power factor corrections circuits operating in

hardswitching conditions. The extremely low

reverse recovery current of the STTH8S06,

reduces significantly the switching power losses

of the MOSFET and thus increases the efficiency

of the application. This leads designers to reduce

the size of their heatsinks.

This device is also intended for applications in

power supplies and power conversions systems,

motor drive, and other power switching

applications.

Table 1.

Device summary

8 A

600 V

4.4 A

175 °C

1.5 V

12 ns

K

A

K

K

A

K

A

TO-220AC

STTH8S06D

TO-220FPAC

STTH8S06FP

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