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STTH8S06 数据表(PDF) 2 Page - STMicroelectronics |
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STTH8S06 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STTH8S06 2/8 1 Characteristics To evaluate the maximum conduction losses use the following equation: P = 1.20 x IF(AV) + 0.087 IF 2 (RMS) Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(AV) Average forward current 8 A IFSM Surge non repetitive forward current tp = 10 ms 60 A Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C Table 3. Thermal parameter Symbol Parameter Maximum Unit Rth(j-c) Junction to case TO-220AC 3.0 °C/W TO220FPAC 5.5 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR Reverse leakage current Tj = 25 °C VR = 600 V 20 µA Tj= 125 °C 25 200 VF Forward voltage drop Tj = 25 °C IF = 8 A 3.4 V Tj = 125 °C 1.5 1.9 Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time IF = 1 A, dIF/dt = - 200 A/µs, VR = 30 V 12 18 ns IRM Reverse current Tj = 25 °C IF = 8 A, dIF/dt = - 200 A/µs, VR = 200 V 1.6 2.2 A Sfactor Softness factor 1 - Qrr Reverse recovery charges 17 nC IRM Reverse current Tj = 125 °C IF = 8 A, dIF/dt = - 200 A/µs, VR = 200 V 4.4 6.0 A Sfactor Softness factor 0.3 - Qrr Reverse recovery charges 90 nC |
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