ACS102-5Tx

5/8

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

IT(RMS)(A)

P(W)

Fig. 5: Maximum power dissipation versus RMS

on-state current.

0

20

40

60

80

100

120

140

0.00

0.05

0.10

0.15

0.20

0.25

Tamb(°C)

IT(RMS)(A)

Fig. 6:

RMS on-state current versus ambient

temperature.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a) / Rth(j-a)

Fig. 7-1: Relative variation of thermal impedance

junction

to

ambient

versus

pulse

duration

(ACS102-5TA) (TO-92).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a) / Rth(j-a)

Fig. 7-2: Relative variation of thermal impedance

junction to ambient versus pulse duration (printed

circuit board FR4, e(Cu) = 35

under “com” pins) (ACS102-5T1) (SO-8).

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Tj(°C)

IGT [Tj] / IGT [Tj=25°C]

Fig. 8: Relative variation of gate trigger current

versus junction temperature.

-40

-20

0

20

40

60

80

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tj(°C)

IH,IL [Tj] / IH,IL [Tj=25°C]

Fig. 9: Relative variation of holding and latching

current versus junction temperature.