ACS102-5Tx

6/8

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

tp(ms)

ITSM(A),I²t(A²s)

Tj initial=25°C

ITSM

I²t

dI/dt limitation:

20A/µs

Fig. 11: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width tp<10ms,

and corresponding value of I

0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2

0.01

0.10

1.00

5.00

VTM(V)

ITM(A)

Tj max.

Vto = 0.85 V

Rd = 400 m

Ω

Fig. 12: On-state characteristics (maximum

values).

0

20

40

60

80 100 120 140 160 180 200 220 240

0

20

40

60

80

100

120

140

160

180

S(mm²)

Rth(j-a) (°C/W)

Fig. 13: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness under “com”

pins: 35

µm) (ACS102-5T1).

0

10

20

30

40

50

60

70

80

90 100 110 120

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Tj(°C)

(dI/dt)c [Tj] / (dI/dt)c [Tj=110°C]

Fig. 14: Relative variation of critical (dI/dt)c versus

junction temperature (ACS102-5T1).

1

10

100

1000

0

1

2

3

4

5

6

7

8

9

Number of cycles

ITSM(A)

Tj initial=25°C

Non repetitive

Tamb=25°C

Repetitive

One cycle

t=20ms

Fig. 10: Surge peak on-state current versus

number of cycles.