5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

30

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 24 V

100

nA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 10 V

50

nA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

0.65

0.85

1.10

V

RDS(on)

Drain-to-Source On-Resistance

VGS = 1.8 V, IDS =0.5 A

160

250

mΩ

VGS = 2.5 V, IDS =0.5 A

110

143

mΩ

VGS = 4.5 V, IDS = 0.5 A

90

117

mΩ

VGS = 8 V, IDS =0.5 A

84

109

mΩ

gfs

Transconductance

VDS = 15 V, IDS = 0.5 A

4.8

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0 V, VDS = 15 V,

ƒ = 1 MHz

150

195

pF

Coss

Output Capacitance

44

57

pF

Crss

Reverse Transfer Capacitance

2.2

2.9

pF

RG

Series Gate Resistance

23

Ω

Qg

Gate Charge Total (4.5 V)

VDS = 15 V, IDS = 0.5 A

1040

1350

pC

Qgd

Gate Charge Gate-to-Drain

133

pC

Qgs

Gate Charge Gate-to-Source

226

pC

Qg(th)

Gate Charge at Vth

150

pC

Qoss

Output Charge

VDS = 15 V, VGS = 0 V

1110

pC

td(on)

Turn On Delay Time

VDS = 15 V, VGS = 4.5 V,

IDS = 0.5 A,RG = 2 Ω

3.4

ns

tr

Rise Time

1.4

ns

td(off)

Turn Off Delay Time

10.8

ns

tf

Fall Time

3.6

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 0.5 A, VGS = 0 V

0.73

0.9

V

Qrr

Reverse Recovery Charge

VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs

1500

pC

trr

Reverse Recovery Time

5.6

ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-Ambient Thermal Resistance(1)

90

°C/W

Junction-to-Ambient Thermal Resistance(2)

250

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD17381F4

SLPS411G – APRIL 2013 – REVISED JANUARY 2022

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