CSD17381F4 datasheet(4/13 Pages) TI2

4 / 13 page

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

Figure 5-1. Transient Thermal Impedance

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VDS - Drain-to-Source Voltage (V)

VGS =8V

VGS =4.5V

VGS =2.5V

VGS =1.8V

G001

Figure 5-2. Saturation Characteristics

0.4

0.8

1.2

1.6

2.4

VGS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

VDS = 5V

G001

Figure 5-3. Transfer Characteristics

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

Qg - Gate Charge (nC)

ID = 0.5A

VDS =15V

G001

Figure 5-4. Gate Charge

100

1000

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

Figure 5-5. Capacitance

CSD17381F4

SLPS411G – APRIL 2013 – REVISED JANUARY 2022

www.ti.com

Submit Document Feedback

Product Folder Links: CSD17381F4

CSD17381F4 数据表(PDF) 4 Page - Texas Instruments

CSD17381F4 数据表(HTML) 4 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

CSD17381F4 数据表(PDF) 4 Page - Texas Instruments

CSD17381F4 数据表(HTML) 4 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载