VDD

VDD

VSS

VSS

MUX506

A0

A1

A2

VEN

RS

VS

EN

S1

GND

CL

1 nF

D

VOUT

VOUT

VEN

3 V

VOUT

QINJ = CL ×

VOUT

Copyright © 2016, Texas Instruments Incorporated

0 V

A3

21

MUX506, MUX507

www.ti.com

SBAS803A – NOVEMBER 2016 – REVISED NOVEMBER 2017

Product Folder Links: MUX506 MUX507

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Copyright © 2016–2017, Texas Instruments Incorporated

7.8 Charge Injection

The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and

PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate

signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is

denoted by the symbol QINJ. Figure 32 shows the setup used to measure charge injection.

Figure 32. Charge-Injection Measurement Setup