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TLV702

SLVSAG6D – SEPTEMBER 2010 – REVISED JULY 2019

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Copyright © 2010–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.

(2)

All voltages are with respect to network ground terminal.

(3)

The absolute maximum rating is VIN + 0.3 V or 6.0 V, whichever is smaller.

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage(2)

IN

–0.3

6

V

EN

–0.3

6(3)

OUT

–0.3

6

Current (source)

OUT

Internally limited

Output short-circuit duration

Indefinite

Total continuous power dissipation

See Thermal Information

Temperature

Operating virtual junction, TJ

–55

150

°C

Storage, Tstg

–55

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged device model (CDM), per JEDEC specification JESD22-C101,

all pins(2)

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

VIN

Input voltage

2

5.5

V

VOUT

Output voltage

1.2

4.8

V

IOUT

Output current

0

300

mA

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV702

UNIT

DBV (SOT-23)

DSE (WSON)

5 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

249.2

321.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

136.4

207.9

°C/W

RθJB

Junction-to-board thermal resistance

85.9

281.5

°C/W

ψJT

Junction-to-top characterization parameter

19.5

42.4

°C/W

ψJB

Junction-to-board characterization parameter

85.3

284.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

142.3

°C/W