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BDX53B 数据表(PDF) 1 Page - STMicroelectronics |
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BDX53B 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES APPLICATIONS s AUDIO AMPLIFIERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54B and BDX54C respectively. ® INTERNAL SCHEMATIC DIAGRAM September 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Un it NPN BDX53B BDX53C PNP BDX54B BDX54C VCBO Collector-Base Voltage (IE = 0) 80 100 V VCEO Collector-Emitter Voltage (IB = 0) 80 100 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 8 A ICM Collector Peak Current (repetitive) 12 A IB Base Current 0.2 A Ptot T otal Dissipation at Tc ≤ 25 oC 60 W Tstg Storage Temperat ure -65 t o 150 o C Tj Max. Operating Junction Temperature 150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 R1 Typ. = 10 K Ω R2 Typ. = 150 Ω 1/6 |
类似零件编号 - BDX53B |
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类似说明 - BDX53B |
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