BDX53B datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.08

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ICBO

Collector Cut -of f

Current (IE =0)

for BDX53B/54B

VCB =80 V

for BDX53C/54C

VCB =100V

0. 2

ICEO

Collector Cut -of f

Current (IB =0)

for BDX53B/54B

VCE =40 V

for BDX53C/54C

VCE =50V

0. 5

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(s us)

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =100 mA

for BDX53B/ 54B

for BDX53C/54C

100

VCE(sat)

∗ Collector-emitter

Sat uration Volt age

IC =3 A

I B =12 mA

VBE(sat)

∗ Base-emitter

Sat uration Volt age

IC =3 A

I B =12 mA

2. 5

hFE

∗

DC Current Gain

IC =3 A

VCE = 3 V

750

∗

Parallel-diode Forward

Voltage

IF =3 A

IF =8 A

1.8

2.5

2. 5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

Derating Curve

BDX53B - BDX53C - BDX54B - BDX54C

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