Nexperia

PRMD2

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

PRMD2

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Product data sheet

14 June 2017

7 / 15

IC (mA)

10-1

10

1

006aac797

1

10

VI(off)

(V)

10-1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. NPN transistor: Off-state input voltage as a

function of collector current; typical values

VCB (V)

0

50

40

20

30

10

006aac798

1

2

3

Cc

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 8. NPN transistor: Collector capacitance as a

function of collector-base voltage; typical

values

006aac757

IC (mA)

10-1

102

10

1

102

103

fT

(MHz)

10

VCE = 5 V; Tamb = 25 °C

Fig. 9. NPN transistor: Transition frequency as a

function of collector current; typical values of

built-in transistor

IC (mA)

-10-1

-102

-10

-1

006aac800

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 10. PNP transistor: DC current gain as a function

of collector current; typical values