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TPS791

SLVS325D – MARCH 2001 – REVISED FEBRUARY 2018

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Copyright © 2001–2018, Texas Instruments Incorporated

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

(1)

To calculate the minimum input voltage for your maximum output current, use the following formula:

VIN(min) = VOUT(max) + dropout voltage (VDO) at maximum load.

(2)

Continuous output current and operating junction temperature are limited by internal protection circuitry, but the device is not

recommended to be operated under conditions beyond those specified in this table for extended periods of time.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage(1)

2.7

5.5

V

IOUT

Continuous output current(2)

0

100

mA

TJ

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TPS791

UNIT

DBV (SOT23)

DBV (SOT23)

5 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

192.6

168.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

104.2

87.1

°C/W

RθJB

Junction-to-board thermal resistance

55.2

36.9

°C/W

ψJT

Junction-to-top characterization parameter

24.1

17.1

°C/W

ψJB

Junction-to-board characterization parameter

54.8

36.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W