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FDS6892A.. 数据表(PDF) 3 Page - ON Semiconductor

部件名 FDS6892A..
功能描述  Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

FDS6892A.. 数据表(HTML) 3 Page - ON Semiconductor

  FDS6892A.. Datasheet HTML 1Page - ON Semiconductor FDS6892A.. Datasheet HTML 2Page - ON Semiconductor FDS6892A.. Datasheet HTML 3Page - ON Semiconductor FDS6892A.. Datasheet HTML 4Page - ON Semiconductor FDS6892A.. Datasheet HTML 5Page - ON Semiconductor FDS6892A.. Datasheet HTML 6Page - ON Semiconductor FDS6892A.. Datasheet HTML 7Page - ON Semiconductor  
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FDS6892A Rev C (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
5
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55
°C
1
10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
0.9
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 7.5 A
VGS = 2.5 V,
ID = 6.5 A
VGS = 4.5 V,ID = 7.5 A,TJ = 125
°C
13
17
18
18
24
27
m
ID(on)
On–State Drain Current
VGS = 4.5V,
VDS = 5 V
15
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 7.5 A
37
S
Dynamic Characteristics
Ciss
Input Capacitance
1333
pF
Coss
Output Capacitance
301
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
160
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
15
27
ns
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
9
18
ns
Qg
Total Gate Charge
12
17
nC
Qgs
Gate–Source Charge
2.5
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 7.5 A,
VGS = 4.5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.7
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in
2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%



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