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BTA10 数据表(PDF) 1 Page - STMicroelectronics

部件名 BTA10
功能描述  TRIACS
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BTA10 数据表(HTML) 1 Page - STMicroelectronics

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BTA10 GP
March 1995
TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
° conduction angle)
Tc = 90
°C10
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°C)
tp = 8.3 ms
126
A
tp = 10 ms
120
I2tI2t value
tp = 10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10
A/
µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
TO220AB
(Plastic)
A1
A2
G
.
LOW IH = 13mA max
.
HIGH SURGE CURRENT : ITSM = 120A
.
IGT SPECIFIED IN FOUR QUADRANTS
.
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTA10-
Unit
400 GP
600 GP
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
400
600
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA10 GP’s use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
1/4


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