0

1

2

3456789

10

0

2

4

6

8

10

12

14

180

O

=180

o

= 120

o

=90

o

=60

o

=30

o

T(RMS)

I

(A)

P(W)

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).

(curves are cut off by (dI/dt)c limitation)

0

204060

80

100

120

140

0

2

4

6

8

10

12

14

-85

-95

-105

-115

-125

P(W)

Rth = 0 C/W

2.5 C/W

5C/W

10 C/W

o

o

o

o

Tamb ( C)

o

Tcase ( C)

o

Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (Tamb

and Tcase) for different thermal resistances heatsink +

contact.

0

10 20 30 40 50 60 70 80 90 100 110 120 130

0

2

4

6

8

10

12

= 180

o

Tcase( C)

o

I

(A)

T(RMS)

Fig.3 : RMS on-state current versus case temperature.

1E-3

1E-2

1E-1

1E +0

1 E +1

1E +2 5 E+2

0.01

0.1

1

Zth/Rth

Zt h( j-c )

Zt h( j-a )

tp (s )

Fig.4 : Relative variation of thermal impedance versus

pulse duration.

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.

BTA10 GP

3/4