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STM32MP151AAB3T 数据表(PDF) 158 Page - STMicroelectronics |
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STM32MP151AAB3T 数据表(HTML) 158 Page - STMicroelectronics |
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158 / 245 page ![]() Electrical characteristics STM32MP151A 158/245 DS12500 Rev 1 Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: • Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. • FTB: a burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 43. They are based on the EMS levels and classes defined in application note AN1709 available from the ST website www.st.com. As a consequence, it is recommended to add a serial resistor (1 kΩ) located as close as possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm on PCB). Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations The software flowchart must include the management of runaway conditions such as: • Corrupted program counter • Unexpected reset • Critical Data corruption (control registers...) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. Table 43. EMS characteristics Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD = 3.3 V, VDDCORE = 1.2 V, TA = +25 °C, LFBGA448, Fmpuss_ck = 648 MHz, Fmcu_ck = 209 MHz, M4 core not running, conforms to IEC 61000-4- 2 2B VFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance 5A |
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