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STM32MP151AAB3T 数据表(PDF) 159 Page - STMicroelectronics

部件名 STM32MP151AAB3T
功能描述  Arm® Cortex®-A7 650 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog
PDF  245 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP151AAB3T 数据表(HTML) 159 Page - STMicroelectronics

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DS12500 Rev 1
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STM32MP151A
Electrical characteristics
228
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015 available from the
ST website www.st.com.).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Table 44. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
8/400 MHz
SEMI
Peak level
VDD = 3.6 V, VDDCORE = 1.2 V, TA = 25 °C,
LFBGA448 package, Fmpuss_ck = 648 MHz,
Fmcu_ck = 209 MHz, M4 core not running,
conforming to IEC61967-2
0.1 to 30 MHz
10
dBµV
30 to 130 MHz
-1
130 MHz to 1 GHz
18
1 GHz to 2 GHz
8
EMI Level
3.5
-
Table 45. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming
to ANSI/ESDA/JEDEC
JS-001
All
1C
1000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming
to ANSI/ESDA/JEDEC
JS-002
All
C1
250
1. Guaranteed by characterization results.



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