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STM32MP151AAB3T 数据表(PDF) 159 Page - STMicroelectronics |
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STM32MP151AAB3T 数据表(HTML) 159 Page - STMicroelectronics |
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159 / 245 page ![]() DS12500 Rev 1 159/245 STM32MP151A Electrical characteristics 228 To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015 available from the ST website www.st.com.). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. 6.3.14 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002 standards. Table 44. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/400 MHz SEMI Peak level VDD = 3.6 V, VDDCORE = 1.2 V, TA = 25 °C, LFBGA448 package, Fmpuss_ck = 648 MHz, Fmcu_ck = 209 MHz, M4 core not running, conforming to IEC61967-2 0.1 to 30 MHz 10 dBµV 30 to 130 MHz -1 130 MHz to 1 GHz 18 1 GHz to 2 GHz 8 EMI Level 3.5 - Table 45. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C conforming to ANSI/ESDA/JEDEC JS-001 All 1C 1000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to ANSI/ESDA/JEDEC JS-002 All C1 250 1. Guaranteed by characterization results. |
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