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STM32MP151AAB3T 数据表(PDF) 161 Page - STMicroelectronics

部件名 STM32MP151AAB3T
功能描述  Arm® Cortex®-A7 650 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog
PDF  245 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP151AAB3T 数据表(HTML) 161 Page - STMicroelectronics

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STM32MP151A
Electrical characteristics
228
6.3.16
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 48: I/O static characteristics are
derived from tests performed under the conditions summarized in Table 13: General
operating conditions. All I/Os are CMOS and TTL compliant.
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters.
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH).
Table 48. I/O static characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VIL(1)
I/O input low level voltage
1.71 V < VDD < 2.7 V
-
-
0.35 × VDD
V
2.7 V < VDD < 3.6 V
-
-
0.3 × VDD
1.71 V < VDD < 3.6 V
-
-
TBD
VIH(1)
I/O input high level voltage
1.71 V < VDD < 3.6 V
0.7xVDD
--
V
1.71 V < VDD < 3.6 V
TBD
-
-
VHYS(1)
TT_xx, FT_xxx and NRST I/O
input hysteresis
1.71 V < VDD < 3.6 V
-
0.1 ×
VDD
-mV
Ileak
FT_xx input leakage current(1)
0 < VIN ≤ Max(VDD)(6)
--
TBD
nA
Max(VDD) < VIN ≤ 5.5 V
(6)(2)(3)
--
TBD
FT_u, IO
0 < VIN ≤ Max(VDD)(6)
--
±TBD
Max(VDD) < VIN ≤ 5.5 V
(6)(3)
--
TBD(4)
TT_xx input leakage current
0 < VIN ≤ Max(VDD) (6)
--
±TBD
Max(VDD) ≤ VIN < 3.6 V (6)
--
TBD
RPU
Weak pull-up equivalent
resistor(5)
VIN=VSS
25
40
55
kΩ
RPD
Weak pull-down equivalent
resistor(5)
VIN=VDD(6)
25
40
55
CIO
I/O pin capacitance
-
-
5
-
pF
1. Guaranteed by design.
2. All FT_xx IO except FT_uf, FT_u.
3. VIN must be less than Max(VDD) + 3.6 V.
4. To sustain a voltage higher than MIN(VDD, VDDA, VDD3V3_USBxxx) +0.3 V, the internal pull-up and pull-down resistors must
be disabled.
5. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
6. Max(VDD) is the maximum value of all the I/O supplies.



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