CSD18532KCS datasheet(3/14 Pages) TI2

3 / 14 page

3 Specifications

3.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 48V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

1.5

1.8

2.2

RDS(on)

Drain-to-Source On Resistance

VGS = 4.5V, ID = 100A

4.2

5.3

mΩ

VGS = 10V, ID = 100A

3.3

4.2

mΩ

gfs

Transconductance

VDS = 30V, ID = 100A

187

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 30V, ƒ = 1MHz

3900

4680

Coss

Output Capacitance

470

564

Crss

Reverse Transfer Capacitance

Series Gate Resistance

1.3

2.6

Ω

Gate Charge Total (4.5V)

VDS = 30V, ID = 100A

Gate Charge Total (10V)

Qgd

Gate Charge Gate-to-Drain

6.9

Qgs

Gate Charge Gate-to-Source

Qg(th)

Gate Charge at Vth

7.3

Qoss

Output Charge

VDS = 30V, VGS = 0V

td(on)

Turn On Delay Time

VDS = 30V, VGS = 10V,

IDS = 100A, RG = 0Ω

7.8

Rise Time

5.3

td(off)

Turn Off Delay Time

24.2

Fall Time

5.6

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 100A, VGS = 0V

0.8

Qrr

Reverse Recovery Charge

VDS= 30V, IF = 100A,

di/dt = 300A/μs

127

trr

Reverse Recovery Time

3.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.6

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

www.ti.com

CSD18532KCS

SLPS361C – AUGUST 2012 – REVISED MARCH 2024

Submit Document Feedback

Product Folder Links: CSD18532KCS

CSD18532KCS 数据表(PDF) 3 Page - Texas Instruments

CSD18532KCS 数据表(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表下载