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CSD18532KCS 数据表(PDF) 5 Page - Texas Instruments

部件名 CSD18532KCS
功能描述  CSD18532KCS 60V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

CSD18532KCS 数据表(HTML) 5 Page - Texas Instruments

  CSD18532KCS Datasheet HTML 1Page - Texas Instruments CSD18532KCS Datasheet HTML 2Page - Texas Instruments CSD18532KCS Datasheet HTML 3Page - Texas Instruments CSD18532KCS Datasheet HTML 4Page - Texas Instruments CSD18532KCS Datasheet HTML 5Page - Texas Instruments CSD18532KCS Datasheet HTML 6Page - Texas Instruments CSD18532KCS Datasheet HTML 7Page - Texas Instruments CSD18532KCS Datasheet HTML 8Page - Texas Instruments CSD18532KCS Datasheet HTML 9Page - Texas Instruments Next Button
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0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
ID = 250uA
G001
Figure 3-6. Threshold Voltage vs Temperature
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 100A
TC = 125ºC Id = 100A
G001
Figure 3-7. On-State Resistance vs Gate-to-Source
Voltage
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75 −50 −25
0
25
50
75
100 125 150 175 200
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID = 100A
G001
Figure 3-8. Normalized On-State Resistance vs
Temperature
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
Figure 3-9. Typical Diode Forward Voltage
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 0.6ºC/W
G001
Figure 3-10. Maximum Safe Operating Area
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
Figure 3-11. Single Pulse Unclamped Inductive
Switching
www.ti.com
CSD18532KCS
SLPS361C – AUGUST 2012 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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5
Product Folder Links: CSD18532KCS



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